Membrane consisting of silicon carbide and silicon nitride, method for the preparation thereof and mask for X-ray lithography utilizing the same
US5209996A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1992 |
| Grant date | May 11, 1993 |
| Priority date | — |
| Expiry date | Mar 11, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/167
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An X-ray transmitting homogeneous membrane suitable for use in a mask for X-ray lithography is disclosed which compositely consists of silicon carbide and silicon nitride in a specified molar proportion. The membrane can be prepared by depositing a film of a homogeneous composite of silicon carbide and silicon nitride on a silicon wafer as a substrate by sputering using a target which is also a sintered composite material of silicon carbide and silicon nitride. As compared with membranes of silicon carbide alone or silicon nitride alone, the inventive membrane is advantageous in respect of the high resistance against high-energy irradiation, chemicals and moisture as well as in respect of high visible-light transmission, especially, when the tensile stress within the membrane is in a specified range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.