High efficiency light emitting diodes from bipolar gallium nitride
US5210051A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 1991 |
| Grant date | May 11, 1993 |
| Priority date | — |
| Expiry date | Jun 5, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is a method of growing intrinsic, substantially undoped single crystal gallium nitride with a donor concentration of 7.times.10.sup.17 cm.sup.-3 or less. The method comprises introducing a source of nitrogen into a reaction chamber containing a growth surface while introducing a source of gallium into the same reaction chamber and while directing nitrogen atoms and gallium atoms to a growth surface upon which gallium nitride will grow. The method further comprises concurrently maintaining the growth surface at a temperature high enough to provide sufficient surface mobility to the gallium and nitrogen atoms that strike the growth surface to reach and move into proper lattice sites, thereby establishing good crystallinity, to establish an effective sticking coefficient, and to thereby grow an epitaxial layer of gallium nitride on the growth surface, but low enough for the partial pressure of nitrogen species in the reaction chamber to approach the equilibrium vapor pressure of those nitrogen species over gallium nitride under the other ambient conditions of the chamber to thereby minimize the loss of nitrogen from the gallium nitride and the nitrogen vacancies in the r…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.