Cree Research Inc.
49Patents
0Active
49Granted
42Portfolio score
Filing activity: Dec 14, 1988 → Sep 22, 1999
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5523589A | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime | Electricity | 653 | Expired |
| US5393993A | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices | Electricity | 587 | Expired |
| US5210051A | High efficiency light emitting diodes from bipolar gallium nitride | Emerging Cross-Sectional Technologies | 549 | Expired |
| US5739554A | Double heterojunction light emitting diode with gallium nitride active layer | Electricity | 516 | Expired |
| US4946547A | Method of preparing silicon carbide surfaces for crystal growth | Electricity | 482 | Expired |
| US4918497A | Blue light emitting diode formed in silicon carbide | Electricity | 481 | Expired |
| US4966862A | Method of production of light emitting diodes | Electricity | 438 | Expired |
| US5200022A | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product | Emerging Cross-Sectional Technologies | 435 | Expired |
| US5027168A | Blue light emitting diode formed in silicon carbide | Electricity | 402 | Expired |
| US5912477A | High efficiency light emitting diodes | Emerging Cross-Sectional Technologies | 392 | Expired |
| US5631190A | Method for producing high efficiency light-emitting diodes and resulting diode structures | Emerging Cross-Sectional Technologies | 382 | Expired |
| US5359345A | Shuttered and cycled light emitting diode display and method of producing the same | Physics | 344 | Expired |
| US5416342A | Blue light-emitting diode with high external quantum efficiency | Electricity | 334 | Expired |
| US5338944A | Blue light-emitting diode with degenerate junction structure | Electricity | 297 | Expired |
| US5604135A | Method of forming green light emitting diode in silicon carbide | Emerging Cross-Sectional Technologies | 261 | Expired |
| US5724062A | High resolution, high brightness light emitting diode display and method and producing the same | Physics | 253 | Expired |
| US5812105A | Led dot matrix drive method and apparatus | Electricity | 243 | Expired |
| US5506421A | Power MOSFET in silicon carbide | Electricity | 194 | Expired |
| US5719409A | Silicon carbide metal-insulator semiconductor field effect transistor | Electricity | 178 | Expired |
| US5592501A | Low-strain laser structures with group III nitride active layers | Electricity | 175 | Expired |
| US5270554A | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide | Electricity | 138 | Expired |
| US5093576A | High sensitivity ultraviolet radiation detector | Electricity | 135 | Expired |
| US5465249A | Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate | Electricity | 126 | Expired |
| US5972801A | Process for reducing defects in oxide layers on silicon carbide | Emerging Cross-Sectional Technologies | 119 | Expired |
| US5539217A | Silicon carbide thyristor | Electricity | 107 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.