Method of making polysilicon Schottky clamped transistor and vertical fuse devices
US5212102A · kind A · utility
14Cited by
16References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1992 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Jun 5, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
An improved method for fabricating polysilicon Schottky clamped transistors and vertical fuse devices in the same semiconductor structure is disclosed. The resulting structure yields an improved Schottky clamped transistor and vertical fuse device. The improved Schottky transistor has a silicide rectifying contact between the base and collector of the transistor, the vertical fuse is provided with a direct contact between an aluminum contact metal and a polysilicon emitter contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.