George E. Ganschow
7Patents
5h-index
17Co-inventors
49Inventor score
Filing activity: Apr 2, 1990 → Feb 14, 1994
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5144404A | Polysilicon Schottky clamped transistor and vertical fuse devices | Electricity | 78 | Expired |
| US5436496A | Vertical fuse device | Electricity | 27 | Expired |
| US5139961A | Reducing base resistance of a BJT by forming a self aligned silicide in the single crystal region of the extrinsic base | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5045483A | Self-aligned silicided base bipolar transistor and resistor and method of fabrication | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5212102A | Method of making polysilicon Schottky clamped transistor and vertical fuse devices | Electricity | 14 | Expired |
| US5289024A | Bipolar transistor with diffusion compensation | Electricity | 5 | Expired |
| US5482874A | Inversion implant isolation process | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.