Method of making a heterojunction bipolar transistor
US5212103A · kind A · utility
5Cited by
9References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 20, 1991 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Sep 20, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an n.sup.+ type InGaAs layer at a surface of the device, a refractory metal emitter electrode making ohmic contact to the n.sup.+ layer without alloying and an externally accessible base region produced in the neighborhood of the emitter electrode by diffusion using the emitter electrode and an insulating side wall film as a diffusion mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.