Method for manufacturing an MOS transistor

US5212104A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Helmut Klose · Munich, DE

Key dates

• Filing date: Mar 9, 1992
• Grant date: May 18, 1993
• Expiry date: Mar 9, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/314

Abstract

A method for the manufacture of an MOS transistor. A channel region is produced by selective epitaxy on a substrate (1) doped with a first conductivity type, said channel region containing a delta-shaped layer (5) doped with the first conductivity type. Source region (13) and drain region (14) are formed, in particular, by drive-out from a doped glass layer (12).