Helmut Klose
32Patents
14h-index
29Co-inventors
77Inventor score
Filing activity: Aug 30, 1991 → May 31, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5767001A | Process for producing semiconductor components between which contact is made vertically | Electricity | 391 | Expired |
| US6172391A | DRAM cell arrangement and method for the manufacture thereof | Electricity | 78 | Expired |
| US5760455A | Micromechanical semiconductor component and manufacturing method therefor | Performing Operations; Transporting | 55 | Expired |
| US5447067A | Acceleration sensor and method for manufacturing same | Physics | 51 | Expired |
| US5741733A | Method for the production of a three-dimensional circuit arrangement | Electricity | 45 | Expired |
| US5373181A | Sensor for sensing fingerpaints and method for producing the sensor | Physics | 42 | Expired |
| US5930596A | Semiconductor component for vertical integration and manufacturing method | Electricity | 41 | Expired |
| US6593612B2 | Structure and method for forming a body contact for vertical transistor cells | Electricity | 28 | Expired |
| US5882963A | Method of manufacturing semiconductor components | Electricity | 17 | Expired |
| US5431051A | Tunnel effect acceleration sensor | Physics | 15 | Expired |
| US5422303A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5326718A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5177582A | CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same | Electricity | 14 | Expired |
| US5834332A | Micromechanical semiconductor components and manufacturing method therefor | Performing Operations; Transporting | 14 | Expired |
| US5498567A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5358882A | Method for manufacturing a bipolar transistor in a substrate | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5969534A | Semiconductor testing apparatus | Physics | 8 | Expired |
| US6441424B1 | Integrated circuit configuration having at least one capacitor and method for producing the same | Electricity | 8 | Expired |
| US5450754A | Pressure sensor | Physics | 7 | Expired |
| US5700702A | Method for manufacturing an acceleration sensor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5273934A | Method for producing a doped region in a substrate | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5212104A | Method for manufacturing an MOS transistor | Electricity | 6 | Expired |
| US6022786A | Method for manufacturing a capacitor for a semiconductor arrangement | Electricity | 6 | Expired |
| US6043543A | Read-only memory cell configuration with trench MOS transistor and widened drain region | Electricity | 4 | Expired |
| US6583464B1 | Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.