Monolithic semiconductor integrated circuit ferroelectric memory device
US5214300A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Nov 27, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G7/02
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 25,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.