Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove
US5214302A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Dec 13, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A semiconductor integrated circuit device having a structure in which each of the following regions, that is, a first region for forming the base and emitter regions of each of the bipolar transistors, a second region for forming the collector lead-out region of the bipolar transistor, and a third region for forming each of the MISFETs, is projected from the main surface of a semiconductor substrate, whereby it is possible to effect isolation between the MISFETs and between these MISFETs and the bipolar transistors with the same isolation structure and in the same manufacturing step as those for the isolation between the bipolar transistors. In this device, furthermore, the base region of the bipolar transistor is electrically and self-alignedly connected to a base electrode which is formed over the main surface so as to surround the emitter region. The bipolar transistor is characterized as a self-alignment transistor and that the insulating side wall spacers corresponding to the gate and base (emitter) electrodes are formed by a same lever.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.