Ion implantation apparatus with variable width slits providing an ion beam of high purity
US5216253A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 22, 1991 |
| Grant date | Jun 1, 1993 |
| Priority date | — |
| Expiry date | Oct 22, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30472
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an ion implantation apparatus, a first slit for limiting an ion beam width is provided between an ion source and a mass separation electromagnet. An accelerator is provided behind the mass separation electromagnet. A second slit for separating the ion beam is provided between a deflector provided behind the accelerator and a wafer. The slit widths of the first and second slits are controlled by a controller which monitors an ion source acceleration voltage, a magnetic field intensity of the mass separation electromagnet, an accelerator voltage, and a magnetic field intensity of the deflector, and control the slit widths of the first and second slits based on the monitored information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.