Quantum well structures useful for semiconductor devices
US5216262A · kind A · utility
193Cited by
7References
17Claims
0Family size
Inventor
Key dates
| Filing date | Mar 2, 1992 |
| Grant date | Jun 1, 1993 |
| Priority date | — |
| Expiry date | Mar 2, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum well structure useful for semiconducting devices comprises two barrier regions and a thin epitaxially grown monocrystalline semiconductor material quantum well sandwiched between said barrier regions. Each barrier region consists essentially of alternate strain layers forming a superlattice, each of said layers being thinner than said quantum well. The layers are so thin that no defects are generated as a result of the release of stored strain energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.