Semiconductor power devices with alternating conductivity type high-voltage breakdown regions

US5216275A · kind A · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventor

• Xingbi Chen · Chengdu, CN

Key dates

• Filing date: Sep 17, 1991
• Grant date: Jun 1, 1993
• Expiry date: Sep 17, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A semiconductor power device wherein the reverse voltage across the p.sup.+ -regions(s) and the n.sup.+ -regions(s) is sustained by a composite buffer layer, shortly as CB-layer. The CB-layer contains two kinds of semiconductor regions with opposite types of conduction. These two kinds of regions are alternatively arranged, viewed from any cross-section parallel to the interface between the layer itself and the n.sup.+ (or p.sup.+)-region. Whereas the hitherto-used voltage sustaining layer contains only one kind of semiconductor with single type of conduction in the same sectional view. Design guidelines are also provided in this invention. The relation between the on-resistance in unit area Ron and the breakdown voltage V.sub.B of the CB-layer invented is Ron ocV.sub.B.sup.113 which represents a breakthrough to the conventional voltage sustaining layer, whereas the other performances of the power devices remain almost unchanged.