Xingbi Chen
20Patents
8h-index
—Co-inventors
62Inventor score
Filing activity: Sep 17, 1991 → Aug 27, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5216275A | Semiconductor power devices with alternating conductivity type high-voltage breakdown regions | Electricity | 484 | Expired |
| US5726469A | Surface voltage sustaining structure for semiconductor devices | Electricity | 74 | Expired |
| US6635906B1 | Voltage sustaining layer with opposite-doped islands for semi-conductor power devices | Electricity | 34 | Expired |
| US6310365A | Surface voltage sustaining structure for semiconductor devices having floating voltage terminal | Electricity | 26 | Expired |
| US6998681B2 | Lateral low-side and high-side high-voltage devices | Electricity | 15 | Expired |
| US6936867B2 | Semiconductor high-voltage devices | Electricity | 13 | Expired |
| US6936907B2 | Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity | Electricity | 12 | Expired |
| US7230310B2 | Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regions | Electricity | 10 | Expired |
| US8378427B2 | High speed IGBT | Electricity | 6 | Active |
| US7227197B2 | Semiconductor high-voltage devices | Electricity | 2 | Expired |
| US8294215B2 | Low voltage power supply | Electricity | 1 | Active |
| US8159026B2 | Lateral high-voltage semiconductor devices with majorities of both types for conduction | Electricity | 1 | Active |
| US7192872B2 | Method of manufacturing semiconductor device having composite buffer layer | Electricity | 1 | Expired |
| US8134206B2 | Semiconductor device | Electricity | 0 | Active |
| US8242533B2 | Lateral Schottky diode | Electricity | 0 | Active |
| US7701006B2 | Method of producing a low-voltage power supply in a power integrated circuit | Electricity | 0 | Active |
| US7659596B2 | Lateral high-voltage devices with optimum variation lateral flux by using field plate | Electricity | 0 | Active |
| US8941207B2 | Surface (lateral) voltage-sustaining region with an insulator film containing conductive particles | Electricity | 0 | Active |
| US8994067B2 | Both carriers controlled thyristor | Electricity | 0 | Active |
| US7795638B2 | Semiconductor device with a U-shape drift region | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.