Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors
US5216572A · kind A · utility
72Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1992 |
| Grant date | Jun 1, 1993 |
| Priority date | — |
| Expiry date | Mar 19, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
Abstract
A ferroelectric capacitor for use in integrated circuits and having an asymmetric operation. The capacitor has a bottom electrode, a layer of ferroelectric material over the bottom electrode, a dielectric spacer on the sides of the bottom electrode and ferroelectric material, and a top electrode over the layer of ferroelectric material. The bottom and top electrode are comprised of different materials. Alternatively, an ion implantation region is formed in the top surface of the layer of ferroeletric material. A method of forming the asymmetric ferroelectric capacitor is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.