Method of forming substrate contact trenches and isolation trenches using anodization for isolation
US5217920A · kind A · utility
34Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1992 |
| Grant date | Jun 8, 1993 |
| Priority date | — |
| Expiry date | Jun 18, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor structure includes providing a substrate having at least one layer formed thereon. At least two trenches are formed through the layer and into the substrate wherein at least one trench is for isolation and at least one trench is for making contact to the substrate. After a trench liner is formed on the sidewalls of the trenches, the trenches are filled with doped semiconductor material. The doped semiconductor material in the trench for isolation is then anodized. After the anodization, the anodized trench fill material is oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.