Metal oxide semiconductor field effect transistor and method of making the same
US5219777A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 11, 1992 |
| Grant date | Jun 15, 1993 |
| Priority date | — |
| Expiry date | Jun 11, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET comprising a substrate of a first conductivity type, a gate located on the substrate, a channel region of the first conductivity type located beneath a surface portion of the substrate corresponding to a region defined beneath said gate, low concentration and high concentration source regions of a second conductivity type located beneath a surface portion of the substrate corresponding to one of opposite sides of said channel region, and low concentration and high concentration drain regions of the second conductivity type located beneath a surface portion of the substrate corresponding to the other of opposite sides of the channel region. A pair of first impurity regions of the first conductivity type are located to surround said second conductivity type low concentration source region and said second conductivity type low concentration drain region respectively. Also, a second impurity region of the first conductivity type is located within a portion of the bulk substrate spaced a predetermined distance beneath the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.