Goldstar Electron Co., Ltd.
262Patents
0Active
262Granted
42Portfolio score
Filing activity: Jun 7, 1990 → May 25, 2000
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5367488A | DRAM having bidirectional global bit lines | Physics | 443 | Expired |
| US5444301A | Semiconductor package and method for manufacturing the same | Electricity | 250 | Expired |
| US5428248A | Resin molded semiconductor package | Electricity | 248 | Expired |
| US5644169A | Mold and method for manufacturing a package for a semiconductor chip and the package manufactured thereby | Electricity | 198 | Expired |
| US5219777A | Metal oxide semiconductor field effect transistor and method of making the same | Electricity | 127 | Expired |
| US5438545A | Data output buffer of semiconductor memory device for preventing noises | Electricity | 100 | Expired |
| US5554886A | Lead frame and semiconductor package with such lead frame | Electricity | 90 | Expired |
| US5331235A | Multi-chip semiconductor package | Electricity | 86 | Expired |
| US5716879A | Method of making a thin film transistor | Electricity | 84 | Expired |
| US5364807A | Method for fabricating LDD transitor utilizing halo implant | Electricity | 78 | Expired |
| US5363279A | Semiconductor package for a semiconductor chip having centrally located bottom bond pads | Emerging Cross-Sectional Technologies | 76 | Expired |
| US5256587A | Methods of patterning and manufacturing semiconductor devices | Emerging Cross-Sectional Technologies | 70 | Expired |
| US5374575A | Method for fabricating MOS transistor | Electricity | 69 | Expired |
| US5229315A | Method for forming an isolated film on a semiconductor device | Emerging Cross-Sectional Technologies | 68 | Expired |
| US5622873A | Process for manufacturing a resin molded image pick-up semiconductor chip having a window | Electricity | 63 | Expired |
| US5342800A | Method of making memory cell capacitor | Emerging Cross-Sectional Technologies | 63 | Expired |
| US5605612A | Gas sensor and manufacturing method of the same | Physics | 62 | Expired |
| US5270257A | Method of making metal oxide semiconductor field effect transistors with a lightly doped drain structure having a recess type gate | Electricity | 56 | Expired |
| US5457067A | Process for formation of an isolating layer for a semiconductor device | Electricity | 53 | Expired |
| US5532968A | Self refresh control circuit for memory cell array | Physics | 52 | Expired |
| US5512519A | Method of forming a silicon insulating layer in a semiconductor device | Electricity | 49 | Expired |
| US5459094A | Method for fabricating a capacitor cell in the semiconductor memory device having a step portion | Electricity | 47 | Expired |
| US5459091A | Method for fabricating a non-volatile memory device | Electricity | 45 | Expired |
| US5843812A | Method of making a PMOSFET in a semiconductor device | Electricity | 42 | Expired |
| US5391907A | Semiconductor device with buried inverse T-type field region | Electricity | 42 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.