Trenching techniques for forming channels, vias and components in substrates
US5219787A · kind A · utility
118Cited by
21References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1992 |
| Grant date | Jun 15, 1993 |
| Priority date | — |
| Expiry date | Feb 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1189
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Trenching techniques for forming a channel partially through and a via completely through the insulating layer of a substrate are disclosed. With additional steps the channel can form an electrically conductive line, an electrode of an integrated capacitor, or an optical waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.