Micromechanical thermoelectric sensor element
US5220189A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1983 |
| Grant date | Jun 15, 1993 |
| Priority date | — |
| Expiry date | Jul 6, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/93
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thermoelectric sensor element that is adapted to respond to thermal radiation is capable of manufacture into a sensor array on a single crystal semiconductor means, such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow for a high density of the sensor elements. The sensor elements are manufactured of two dissimilar metals in a sinuous pattern to provide the thermoelectric effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.