Method of making a microaccelerometer having low stress bonds and means for preventing excessive z-axis deflection
US5221400A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1990 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Dec 11, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S73/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microaccelerometer is provided which has a silicon substrate bonded to a silicon capping plate and silicon back plate, wherein the bonds between the three silicon wafers are characterized by a relatively low residual stress level over a wide temperature range. The bonds are formed by means of an appropriate adhesive at a relatively low temperature without degradation to the microaccelerometer. The bonds between the silicon wafers also provide stress relief during use and packaging of the microaccelerometer. With this invention, the damping distance for the proof mass of the microaccelerometer is accurately controllable and stop means are provided for preventing excessive deflection of the proof mass in a direction perpendicular to the plane of the microaccelerometer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.