Method of making Alpha-Ta thin films
US5221449A · kind A · utility
146Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1992 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Jul 9, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.