Peter M. Fryer
18Patents
12h-index
20Co-inventors
74Inventor score
Filing activity: Jul 9, 1992 → Jul 14, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5221449A | Method of making Alpha-Ta thin films | Electricity | 146 | Expired |
| US5281485A | Structure and method of making Alpha-Ta in thin films | Emerging Cross-Sectional Technologies | 144 | Expired |
| US6656308B2 | Process of fabricating a precision microcontact printing stamp | Emerging Cross-Sectional Technologies | 56 | Expired |
| US6620719B1 | Method of forming ohmic contacts using a self doping layer for thin-film transistors | Electricity | 47 | Expired |
| US5912506A | Multi-layer metal sandwich with taper and reduced etch bias and method for forming same | Electricity | 24 | Expired |
| US6380101B1 | Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof | Physics | 23 | Expired |
| US5831283A | Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD | Electricity | 18 | Expired |
| US6420282B1 | Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD | Electricity | 18 | Expired |
| US6791144B1 | Thin film transistor and multilayer film structure and manufacturing method of same | Electricity | 17 | Expired |
| US6783717B2 | Process of fabricating a precision microcontact printing stamp | Performing Operations; Transporting | 14 | Expired |
| US6165917A | Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD | Electricity | 13 | Expired |
| US6731064B2 | Yield enchancement pixel structure for active matrix organic light-emitting diode displays | Electricity | 12 | Expired |
| US6866791B1 | Method of forming patterned nickel and doped nickel films via microcontact printing and uses thereof | Performing Operations; Transporting | 7 | Expired |
| US7037769B2 | Thin film transistor and multilayer film structure and manufacturing method of same | Electricity | 5 | Expired |
| US6545295B2 | Transistor having ammonia free nitride between its gate electrode and gate insulation layers | Electricity | 3 | Expired |
| US6881366B2 | Process of fabricating a precision microcontact printing stamp | Electricity | 3 | Expired |
| US6632536B2 | Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displays | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6890599B2 | Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displays | Emerging Cross-Sectional Technologies | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.