Electrostatic chucking method
US5221450A · kind A · utility
33Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1991 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Aug 6, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an electrostatic chucking method, comprising the steps of: (a) placing a substrate to be chucked electrostatically on a chucking material containing an electrode; (b) chucking the substrate to the chucking material by supplying a predetermined electrical potential to the electrode in the chucking material; (c) removing the substrate from the chucking material; and (d) eliminating residual charges on the chucking material by sputtering it with a plasma gas for a predetermined period. Further, the plasma gas may be capable of etching the chucking material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.