Method of making semiconductor device employing self diffusion of dopant from contact member for augmenting electrical connection to doped region in substrate
US5221634A · kind A · utility
3Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1991 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Aug 23, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to such semiconductor devices comprising: a wiring layer with a predetermined pattern formed over a major surface of a semiconductor substrate through an insulating film, a diffusion layer formed under a contact hole formed in said insulating film in an adjacent region of the wiring layer, and a conductive layer deposited into said contact hole in a state of being connected to said wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.