Songsu Cho
13Patents
6h-index
29Co-inventors
62Inventor score
Filing activity: Aug 23, 1991 → Mar 29, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5804479A | Method for forming semiconductor integrated circuit device having a capacitor | Electricity | 46 | Expired |
| US5578849A | Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance | Electricity | 25 | Expired |
| US5732009A | Semiconductor integrated circuit device including a DRAM in which a cell selection transistor has a stabilized threshold voltage | Electricity | 22 | Expired |
| US6060352A | Method of manufacturing semiconductor device with increased focus margin | Electricity | 9 | Expired |
| US5933724A | Method of manufacturing a semiconductor integrated circuit device using a photomask in which transmitted light beam intensities are controlled | Electricity | 7 | Expired |
| US5933726A | Method of forming a semiconductor device have a screen stacked cell capacitor | Electricity | 7 | Expired |
| US5937290A | Method of manufacturing semiconductor integrated circuit devices using phase shifting mask | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6753219B2 | Method of manufacturing semiconductor integrated circuit devices having a memory device with a reduced bit line stray capacity and such semiconductor integrated circuit devices | Electricity | 4 | Expired |
| US6023084A | Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing same | Electricity | 3 | Expired |
| US5221634A | Method of making semiconductor device employing self diffusion of dopant from contact member for augmenting electrical connection to doped region in substrate | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6077735A | Method of manufacturing semiconductor device | Electricity | 2 | Expired |
| US5831300A | Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing same | Electricity | 1 | Expired |
| US6969649B2 | Method of manufacturing semiconductor integrated circuit devices having a memory device with a reduced bit line stray capacity and such semiconductor integrated circuit devices | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.