Method of manufacturing a Schottky barrier semiconductor device
US5221638A · kind A · utility
10Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1992 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Jun 18, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, there is provided a method of manufacturing a Schottky barrier semiconductor device with lesser variation of barrier height .phi.B which may stably be adjusted in a wide range. A Schottky barrier is formed by combination of an electrode layer, a Ti thin layer and Al layer. The Ti thin oxide layer between the Ti thin and Al layers may prevent variation of barrier height .phi.B during heat treatment. By controlling vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.