Method of producing semiconductor substrate having dielectric separation region
US5223450A · kind A · utility
24Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1991 |
| Grant date | Jun 29, 1993 |
| Priority date | — |
| Expiry date | Apr 1, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric buried layer is formed inside substrates which are directly bonded together. Firstly, a groove or a recess, or both are formed on the principal bonding plane of one of at least two kinds of semiconductor substrates to be bonded together. Once the semiconductor substrates are bonded together, the groove and recess form a space, which is filled with dielectric. Before forming the dielectric buried layer, the invention carries out a process of removing potential damage from corners of the groove and/or recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.