Mitsutaka Katada
15Patents
9h-index
27Co-inventors
68Inventor score
Filing activity: Apr 1, 1991 → Nov 4, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5532176A | Process for fabricating a complementary MIS transistor | Electricity | 85 | Expired |
| US5334870A | Complementary MIS transistor and a fabrication process thereof | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5383993A | Method of bonding semiconductor substrates | Emerging Cross-Sectional Technologies | 31 | Expired |
| US5223450A | Method of producing semiconductor substrate having dielectric separation region | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5753556A | Method of fabricating a MIS transistor | Electricity | 21 | Expired |
| US6337249B1 | Semiconductor device and fabrication process thereof | Electricity | 14 | Expired |
| US6914288B2 | EEPROM and EEPROM manufacturing method | Electricity | 10 | Expired |
| US7642653B2 | Semiconductor device, wiring of semiconductor device, and method of forming wiring | Electricity | 9 | Active |
| US5736770A | Semiconductor device with conductive connecting layer and abutting insulator section made of oxide of same material | Electricity | 9 | Expired |
| US6236085A | Semiconductor memory device having high-concentration region around electric-field moderating layer in substrate | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5675167A | Enhancement-type semiconductor having reduced leakage current | Electricity | 5 | Expired |
| US6339557B1 | Charge retention lifetime evaluation method for nonvolatile semiconductor memory | Physics | 4 | Expired |
| US7796442B2 | Nonvolatile semiconductor memory device and method of erasing and programming the same | Electricity | 1 | Active |
| US8410573B2 | SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same | Electricity | 1 | Active |
| US8035154B2 | Semiconductor device including a plurality of memory cells with no difference in erasing properties | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.