Method of forming refractory metal film
US5223455A · kind A · utility
18Cited by
6References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1992 |
| Grant date | Jun 29, 1993 |
| Priority date | — |
| Expiry date | May 18, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a refractory metal film on a substrate utilizes a reduction reaction of the halides of the refractory metal with respect to monosilane, disilane, or the halides of monosilane and disilane to form the refractory metal film while suppressing the reaction by adding a hydrogen gas. As a result, the refractory metal film is formed with good quality at a high speed, or deposited selectively on the nitrides, etc., of metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.