Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
US5225031A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1991 |
| Grant date | Jul 6, 1993 |
| Priority date | — |
| Expiry date | Apr 10, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.