Frederick J. Walker
30Patents
14h-index
9Co-inventors
70Inventor score
Filing activity: Jul 24, 1985 → Jul 30, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5830270A | CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class | Electricity | 138 | Expired |
| US5225031A | Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process | Chemistry; Metallurgy | 104 | Expired |
| US5450812A | Process for growing a film epitaxially upon an oxide surface and structures formed with the process | Emerging Cross-Sectional Technologies | 72 | Expired |
| US4798951A | Fiber optic displacement transducer with dichroic target | Physics | 70 | Expired |
| US5656634A | N-aryl and N-heteroarylamide and urea derivatives as inhibitors of acyl coenzyme A: cholesterol acyl transferase (ACAT) | Chemistry; Metallurgy | 69 | Expired |
| US5482003A | Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process | Chemistry; Metallurgy | 67 | Expired |
| US6023082A | Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material | Electricity | 51 | Expired |
| US5362878A | Intermediates for making N-aryl and N-heteroarylamide and urea derivatives as inhibitors of acyl coenzyme A: cholesterol acyl transferase (ACAT) | Chemistry; Metallurgy | 49 | Expired |
| US6103008A | Silicon-integrated thin-film structure for electro-optic applications | Electricity | 45 | Expired |
| US6143072A | Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6306668A | Control method and system for use when growing thin-films on semiconductor-based materials | Electricity | 27 | Expired |
| US4711888A | Hydroxy and alkoxy pyrimidines | Chemistry; Metallurgy | 27 | Expired |
| US5906857A | Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment | Chemistry; Metallurgy | 24 | Expired |
| US5693140A | Process for growing a film epitaxially upon a MgO surface | Chemistry; Metallurgy | 24 | Expired |
| US4940712A | Derivatives of hydroxyprimidines as leukotriene synthesis inhibitors | Chemistry; Metallurgy | 14 | Expired |
| US5001136A | Leukotriene-synthesis-inhibiting 2-substitutedmethylamino-5-(hydroxy or alkoxy)pyridines | Chemistry; Metallurgy | 12 | Expired |
| US5876866A | Process for growing a film epitaxially upon an oxide surface and structures formed with the process | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6652989B2 | Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6287710A | Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate and a crystalline oxide-on-semiconductor structure | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6093242A | Anisotropy-based crystalline oxide-on-semiconductor material | Electricity | 6 | Expired |
| US5804323A | Process for growing a film epitaxially upon an oxide surface and structures formed with the process | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5151545A | 3,5-dihydroxy-6,8-nonadienoic acids and derivatives as hypocholesterolemic agents | Chemistry; Metallurgy | 3 | Expired |
| US6080235A | Geometric shape control of thin film ferroelectrics and resulting structures | Chemistry; Metallurgy | 3 | Expired |
| US6511544B2 | Control system for use when growing thin-films on semiconductor-based materials | Electricity | 2 | Expired |
| US5856033A | Process for growing a film epitaxially upon an oxide surface and structures formed with the process | Emerging Cross-Sectional Technologies | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.