Chemical vapor deposition method for forming thin film
US5225245A · kind A · utility
15Cited by
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3Claims
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Assignee
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Key dates
| Filing date | Aug 17, 1990 |
| Grant date | Jul 6, 1993 |
| Priority date | — |
| Expiry date | Aug 17, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for forming, by a chemical vapor deposition process, a thin film of crystals such as diamond on a surface of a heated substrate placed in a reaction vessel. The apparatus has a substrate supporting structure, a heater for heating the substrate by heat conduction or by electric current supplied directly to the substrate, and a cooling device for cooling the substrate. The heater is controlled in accordance with the measured temperature of the substrate so as to accurately maintain the substrate temperature at a constant level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.