Tomohiro Ohta
30Patents
20h-index
39Co-inventors
81Inventor score
Filing activity: Aug 17, 1990 → Dec 26, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5486492A | Method of forming multilayered wiring structure in semiconductor device | Electricity | 81 | Expired |
| US5627102A | Method for making metal interconnection with chlorine plasma etch | Electricity | 69 | Expired |
| US5605867A | Method of manufacturing insulating film of semiconductor device and apparatus for carrying out the same | Emerging Cross-Sectional Technologies | 52 | Expired |
| US5117916A | Sprinkler head and operation monitor therefor | Human Necessities | 46 | Expired |
| US5290736A | Method of forming interlayer-insulating film using ozone and organic silanes at a pressure above atmospheric | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5532191A | Method of chemical mechanical polishing planarization of an insulating film using an etching stop | Electricity | 39 | Expired |
| US5300321A | Process for depositing titanium nitride film by CVD | Chemistry; Metallurgy | 39 | Expired |
| US5305519A | Multilevel interconnect structure and method of manufacturing the same | Electricity | 38 | Expired |
| US6001736A | Method of manufacturing semiconductor device and an apparatus for manufacturing the same | Electricity | 33 | Expired |
| US5973402A | Metal interconnection and method for making | Electricity | 32 | Expired |
| US5652180A | Method of manufacturing semiconductor device with contact structure | Electricity | 31 | Expired |
| US5627345A | Multilevel interconnect structure | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5521423A | Dielectric structure for anti-fuse programming element | Electricity | 28 | Expired |
| US5641985A | Antifuse element and semiconductor device having antifuse elements | Electricity | 25 | Expired |
| US5840821A | Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution | Electricity | 25 | Expired |
| US6063703A | Method for making metal interconnection | Electricity | 25 | Expired |
| US5952723A | Semiconductor device having a multilevel interconnection structure | Electricity | 24 | Expired |
| US5998522A | Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution | Electricity | 21 | Expired |
| US5209182A | Chemical vapor deposition apparatus for forming thin film | Chemistry; Metallurgy | 21 | Expired |
| US5565702A | Antifuse element, semiconductor device having antifuse elements, and method for manufacturing the same | Electricity | 20 | Expired |
| US5552181A | Method for supplying liquid material and process for forming thin films using the liquid material supplying method | Chemistry; Metallurgy | 15 | Expired |
| US5225245A | Chemical vapor deposition method for forming thin film | Chemistry; Metallurgy | 15 | Expired |
| US5679974A | Antifuse element and semiconductor device having antifuse elements | Electricity | 13 | Expired |
| US6839457B1 | Bone measuring method | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5637534A | Method of manufacturing semiconductor device having multilevel interconnection structure | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.