Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations
US5227328A · kind A · utility
17Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1992 |
| Grant date | Jul 13, 1993 |
| Priority date | — |
| Expiry date | Mar 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Epitaxial layers of II-VI semiconductors in-situ doped with high concentrations of a stable acceptor-type impurity and capped with a diffusion-limiting layer, when subjected to a rapid thermal anneal at a temperature between 700 and 950 degrees C., exhibit a high conversion of the impurities to acceptors, sufficient to render the layers p-type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.