Nikhil R. Taskar
25Patents
11h-index
31Co-inventors
75Inventor score
Filing activity: Mar 16, 1992 → May 17, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6734465B1 | Nanocrystalline based phosphors and photonic structures for solid state lighting | Electricity | 162 | Expired |
| US7119372B2 | Flip-chip light emitting diode | Electricity | 103 | Expired |
| US6674837B1 | X-ray imaging system incorporating pixelated X-ray source and synchronized detector | Emerging Cross-Sectional Technologies | 68 | Expired |
| US5990531A | Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made | Electricity | 63 | Expired |
| US7259400B1 | Nanocomposite photonic structures for solid state lighting | Electricity | 54 | Expired |
| US6998281B2 | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics | Electricity | 36 | Expired |
| US6452184B1 | Microchannel high resolution x-ray sensor having an integrated photomultiplier | Physics | 30 | Expired |
| US6300640A | Composite nanophosphor screen for detecting radiation having optically reflective coatings | Physics | 28 | Expired |
| US5915164A | Methods of making high voltage GaN-A1N based semiconductor devices | Electricity | 23 | Expired |
| US5227328A | Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5786233A | Photo-assisted annealing process for activation of acceptors in semiconductor compound layers | Electricity | 13 | Expired |
| US6885004B2 | High resolution tiled microchannel storage phosphor based radiation sensor | Electricity | 10 | Expired |
| US6534772B1 | High resolution high output microchannel based radiation sensor | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5796209A | Gas discharge lamps and lasers fabricated by michromachining | Electricity | 8 | Expired |
| US5273931A | Method of growing epitaxial layers of N-doped II-VI semiconductor compounds | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5354708A | Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5293074A | Ohmic contact to p-type ZnSe | Electricity | 4 | Expired |
| US8465190B2 | Total internal reflective (TIR) optic light assembly | Mechanical Engineering; Lighting; Heating | 4 | Active |
| US6096663A | Method of forming a laterally-varying charge profile in silicon carbide substrate | Electricity | 2 | Expired |
| US6262440A | Metal electrical contact for high current density applications in LED and laser devices | Electricity | 2 | Expired |
| US5624293A | Gas discharge lamps and lasers fabricated by micromachining methodology | Electricity | 2 | Expired |
| US6113691A | Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced | Electricity | 1 | Expired |
| US5547897A | Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine | Emerging Cross-Sectional Technologies | 1 | Expired |
| US9206957B2 | Asymmetric total internal reflective (TIR) optic light assembly | Mechanical Engineering; Lighting; Heating | 1 | Active |
| US5399524A | Method of providing an ohmic type contact on p-type Zn(S)Se | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.