Method of manufacturing semiconductor device
US5227329A · kind A · utility
123Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1991 |
| Grant date | Jul 13, 1993 |
| Priority date | — |
| Expiry date | Aug 30, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A boron doped amorphous silicon film is formed by CVD under the conditions of a pressure lower than 1 atm and a temperature higher than 200.degree. C. and lower than 400.degree. C. by using at least one of disilane and trisilane, and diborane as source gases. Since the resultant amorphous silicon film can diffuse impurities at a lower temperature than in the case of the polycrystalline silicon film formed by the conventional method, a pn junction much shallower than in the prior art can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.