Schottky barrier gate type field effect transistor
US5229625A · kind A · utility
27Cited by
8References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1991 |
| Grant date | Jul 20, 1993 |
| Priority date | — |
| Expiry date | Sep 25, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device somprises a silicon substrate, a boron-doped high resistant silicon carbide layer formed on said silicon substrate and a silicon carbide layer formed on said high resistant silicon carbide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.