CMOS band gap reference circuit

US5229710A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Rainer Kraus · Hersbruck, DE
• Kurt Hoffmann · Taufkirchen, DE

Key dates

• Filing date: Sep 30, 1991
• Grant date: Jul 20, 1993
• Expiry date: Sep 30, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Control
• WIPO sector: Instruments

Abstract

A band gap reference circuit configuration includes first and second bipolar transistors having base-to-emitter voltages. An emitter resistor is connected to the first bipolar transistor. An operational amplifier is connected to the bipolar transistors for processing a difference generated between the base-to-emitter voltages of the first and second bipolar transistors to generate a largely temperature-independent reference voltage. The bipolar transistors are parasitic transistors, and the operational amplifier is constructed in MOS technology.