Method of making a field effect transistor
US5231040A · kind A · utility
10Cited by
7References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1992 |
| Grant date | Jul 27, 1993 |
| Priority date | — |
| Expiry date | Jan 23, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device constituting a high electron mobility transistor or metal semiconductor field effect transistor includes an n.sup.+ type InGaAs layer at an upper surface of the device, a source and a drain electrode on the n.sup.+ type InGaAs layer, as non-alloying ohmic contacts, a gate electrode produced of the same metal as the source and drain electrodes, and the gate electrode and the source and drain electrodes are self-aligningly positioned and separated from each other by L-shaped insulating films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.