Formation of silicide contacts using a sidewall oxide process
US5231042A · kind A · utility
20Cited by
20References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1992 |
| Grant date | Jul 27, 1993 |
| Priority date | — |
| Expiry date | Feb 13, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for formation of silicide structures on a semiconductor device. Oxide sidewalls are formed upon and selectively removed from polysilicon contacts. Refractory metal is deposited and heated, unreacted metal is removed, leaving a metal silicide on selected polysilicon sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.