Semiconductor sensor with piezoresistors and improved electrostatic structures
US5231301A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1991 |
| Grant date | Jul 27, 1993 |
| Priority date | — |
| Expiry date | Oct 2, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0054
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electromechanical sensor is provided which comprises an n-type semiconductor region which defines a flexible member surrounded by a thicker base portion; at least one piezoresistor formed in the semiconductor region; an n+ region formed in the thicker base portion; a first insulative layer which overlays the piezoresistor and which extends at least from the piezoresistor to the first n+ doped region; a guard layer which overlays at least a portion of the first insulative layer such that the guard layer overlays the piezoresistor and extends at least from the piezoresistor to a point adjacent to the n+ region; and a first bias contact which electrically interconnects the n+ region and the guard layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.