Apparatus for forming deposited films with microwave plasma CVD method
US5232507A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1992 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Apr 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for forming deposited films with a microwave plasma CVD method comprises a reactor vessel within which the pressure can be reduced, means for supplying a source gas into the reactor vessel, means for introducing the microwave into the reactor vessel and exciting a microwave discharge plasma, and means for holding a plurality of substrates so as to enclose a discharge space formed within the reactor vessel, and is characterized by comprising a holding member holding together dielectric windows for introducing the microwave into the reactor vessel, substrates for the formation of deposited films disposed so as to surround the dielectric windows and a cooling device for cooling the dielectric windows, and conveying means for conveying the holding member into and out of the reactor vessel in a vacuum atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.