Dielectric isolated substrate and process for producing the same
US5233216A · kind A · utility
3Cited by
1References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1992 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Oct 19, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76297
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric isolated substrate wherein a connecting polycrystalline silicon layer has smooth and flat surface on which a single crystal support is bonded and has a densified crystal structure, or is obtained by further heat treatment at 800.degree. C. or higher after deposition, or has no orientation as to growth direction of polycrystalline silicon, or a buffering layer is formed between a polycrystalline silicon layer and a single crystal support, is excellent in bonding between the single crystal support and the polycrystalline silicon layer by preventing voids at the bonded surface, while enhancing reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.