Process for etching oxide films in a sealed photochemical reactor
US5234540A · kind A · utility
73Cited by
3References
1Claims
0Family size
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Key dates
| Filing date | Apr 30, 1992 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Apr 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for etching oxide films on the semiconductor, or other substrates, in a sealed photochemical reactor. Anhydrous hydrogen fluoride (AHF) gas, or other halogen containing gases, and alcohol vapor carried by an inert gas, such as nitrogen, are passed over the oxides to be etched. The UV radiation shines through a window, which passes the UV radiation onto the oxides while the gases are flowing, and enhances and controls etching of the oxides. The UV window is impervious to the etch process gases. The etch rates are modified, providing for improved oxide etching characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.