Method and device for sputtering of films
US5234560A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1992 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Apr 16, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for controlling thin layer sputtering, especially titanium-nitride-type hard, abrasion-proof layers. Ionization current on substrates, especially at greater distances from cathode, is increased and layers are more homogenous. Density and homogeneity of both ionization and electron current on substrates are increased and ionic cladding during layer sputtering and with floating potential of substrates is possible. Substrates are placed in a holding space defined by lines of force of a magnetic multipolar field that includes a closed tunnel of magnetron-type lines of force above the sputtered cathode and whose direction on the boundary of the holding space alternates from positive to negative polarity and vice versa. In the holding space, interaction of the glow discharge with the magnetic multipolar field forms a homogenous plasma whose particles bombard the substrates. The degree of plasma holding is controlled by the shape of the magnetic field and by the voltage on an auxiliary cathode which passes through the holding space. The present invention includes sources of magnetic field placed around the holding space with alterating polarity. In order to control …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.