Small cell, low contact assistance rugged power field effect devices and method of fabrication
US5234851A · kind A · utility
17Cited by
14References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1992 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Feb 3, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/138
Abstract
A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.