Semiconductor light-emitting device with InGaAlP
US5235194A · kind A · utility
10Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1992 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Jan 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
Abstract
A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.