Transfer region design for charge-coupled device image sensor
US5235196A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1992 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Jul 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
The present invention is directed to an image sensor which comprises a body of a semiconductor material having therein a plurality of photodetectors arranged in a line and a CCD shift register extending along the line of photodetectors adjacent to but spaced from an edge of the photodetectors. The CCD shift register includes a channel region and a plurality of first and second gate electrodes extending over and insulated from the channel region. One of each of the first and second gate electrodes extends across a portion of the edge of each photodetector. Each of the first electrodes has an arm extending along the entire edge of its respective photodetector between the photodetector and the second gate electrode. A separate transfer region is in the body between the edge of each photodetector and its respective first electrode and extends along the entire edge of the photodetector. A transfer gate is over and insulated from the transfer regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.