Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel
US5235198A · kind A · utility
135Cited by
8References
10Claims
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Assignee
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Key dates
| Filing date | Apr 14, 1992 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Apr 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
An interline transfer type area image sensor which operates in a non-interlaced mode and has an array of columns and rows of photoreceptor in which charge from each pixel is transferred into a stage of a vertical two-phase CCD shift register formed by adjacent electrodes of the CCD. Each electrode of a stage has a separate voltage clock. An ion implanted vertical transfer barrier region is formed under an edge of each electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.